GaN Heterostructure Devices: From Materials to Application
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 30 July 2024 | Viewed by 1529
Special Issue Editor
Special Issue Information
Dear Colleagues,
Gallium nitride and its related compound semiconductor materials (AlN, AlGaN, InGaN, InN) and heterostructures (AlGaN/GaN, InGaN/GaN, AlInGaN/GaN, etc.) are attractive wide-band semiconductor materials due to their unique characteristics. Their successful applications in solid-state lighting, power electronic devices, RF devices, UV-LED, Micro-LED, and ultraviolet photodetectors have promoted the rapid development of gallium nitride-based materials and devices. Gallium nitride-based materials also show great application potential in some interdisciplinary fields. In recent years, their application in the fields of biomedicine and brain neuroscience have been widely considered by researchers, due to their chemical stability and biological compatibility. This Special Issue will publish research papers and review articles focusing on recent advances in gallium nitride-based materials and devices, including novel applied research within the crossover sciences.
Prof. Dr. Baijun Zhang
Guest Editor
Manuscript Submission Information
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Keywords
- GaN
- heterostructure
- optoelectronic device
- electronic device
- biosensor
- THz device