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Advanced Metal Oxide Films: Materials and Applications
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Advanced Metal Oxide Films: Materials and Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (31 March 2024) | Viewed by 1963

Special Issue Editor

Dr. Ivan S. Zhidkov

E-Mail Website
Guest Editor
Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg, Russia
Interests: films; oxidation state; transition metal; doping, surface; defects; X-ray spectroscopy; DFT
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Metal oxide films, and in particular, transition metals, have been utilized in the largest number of applications in modern technology. They are used as charge-transport layers in third-generation solar cells, as cathodes in metal-ion batteries, and as gate dielectrics in OFETs, and are widely used in various spintronic devices, among other applications. Despite an impressive number of works both on the practical application of metal oxide films and on the study of their fundamental properties, there are still many unresolved issues. This Special Issue of Coatings is devoted to new methods for producing oxide films, studying their properties, and creating new functional materials and devices based on them. The Special Issue will be of interest not only to physicists, chemists, and materials scientists, but also to engineers and industry representatives.

The aim of the present Special Issue is to present the latest developments in this field through research and review papers. It is my pleasure to invite you to submit a manuscript to this Special Issue. In particular, the topics of interest include, but are not limited to, the following:

  • Novel charge-transport layers based on ZnO, SnO2, TiO2, etc.;
  • Diluted magnetic semiconductors;
  • Biocompatible films;
  • Catalysts;
  • Sensors;
  • Lithium-ion battery cathodes;
  • Luminescent materials.

Dr. Ivan S. Zhidkov
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • films
  • surface
  • metal oxide
  • transition metal
  • doping
  • defects
  • interface
  • surface treatment
  • deposition

Published Papers (3 papers)

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Research

14 pages, 3924 KiB  
Article
Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors
by Yuyun Chen, Yi Shen, Yuanming Chen, Guodong Xu, Yudong Liu and Rui Huang
Coatings 2024, 14(5), 555; https://0-doi-org.brum.beds.ac.uk/10.3390/coatings14050555 - 30 Apr 2024
Viewed by 265
Abstract
Defect annihilation of the IGZO/SiO2 layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (Ta) on the structure of the IGZO/SiO2 layer and the stabilities of [...] Read more.
Defect annihilation of the IGZO/SiO2 layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (Ta) on the structure of the IGZO/SiO2 layer and the stabilities of coplanar IGZO TFTs were investigated in this work. An atomic depth profile showed that the IGZO/SiO2 layer included an IGZO layer, an IGZO/SiO2 interfacial mixing layer, and a SiO2 layer. Higher Ta had only one effect on the IGZO layer and SiO2 layer (i.e., strengthening chemical bonds), while it had complex effects on the interfacial mixing layer—including weakening M-O bonds (M: metallic elements in IGZO), strengthening damaged Si-O bonds, and increasing O-related defects (e.g., H2O). At higher Ta, IGZO TFTs exhibited enhanced positive bias temperature stress (PBTS) stabilities but decreased negative bias temperature stress (NBTS) stabilities. The enhanced PBTS stabilities were correlated with decreased electron traps due to the stronger Si-O bonds near the interfacial layer. The decreased NBTS stabilities were related to increased electron de-trapping from donor-like defects (e.g., weak M-O bonds and H2O) in the interfacial layer. Our results suggest that although higher Ta annihilated the structural damage at the interface from ion bombardment, it introduced undesirable defects. Therefore, to comprehensively improve electrical stabilities, controlling defect generation (e.g., by using a mild sputtering condition of source/drain electrodes and oxides) was more important than enhancing defect annihilation (e.g., through increasing Ta). Full article
(This article belongs to the Special Issue Advanced Metal Oxide Films: Materials and Applications)
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16 pages, 2681 KiB  
Article
Utilizing Metal Oxide Thin Films for Device Engineering of Solution-Processed Organic Multi-Junction Solar Cells
by Afshin Hadipour
Coatings 2024, 14(5), 525; https://0-doi-org.brum.beds.ac.uk/10.3390/coatings14050525 - 24 Apr 2024
Viewed by 393
Abstract
Electron and hole transporting layers play a major role in high-performance and stable organic-based optoelectronic devices. This paper demonstrates detailed device engineering of multi-junction organic photovoltaics built on two different metal oxide-based electron and hole transport (buffer) layers prepared by thermal or solution-processed [...] Read more.
Electron and hole transporting layers play a major role in high-performance and stable organic-based optoelectronic devices. This paper demonstrates detailed device engineering of multi-junction organic photovoltaics built on two different metal oxide-based electron and hole transport (buffer) layers prepared by thermal or solution-processed methods. The main focus is on the device processing parameters as well as practical details of preparation of buffer layers to give the research community a clear, step-by-step recipe to successfully replicate and build series and parallel connected multi-junction solution-based organic solar cells for their needs. Here, the recipes and deposition conditions of two metal oxide buffer layers are presented in detail, based on basic commercially available materials and tools, to achieve well-engineered tandem (multi-junction) solution-processed organic solar cells. The buffer layers have appropriate energy levels for electrical selectivity of anode and cathode electrodes, and they are highly stable and chemically compatible with processing of solution-based polymer solar cells. To demonstrate the engineering steps of multi-junction devices, the PCE10:PC70BM blend is used as the active layer for all subcells. Then, to improve the power conversion efficiency of the single-junction photovoltaic device, PCE10:PC70BM blend is used in combination with DPPx:PC70BM with different absorption spectra for bottom and top subcell active layers. An optimized series tandem device with 10.6% power conversion efficiency is demonstrated. Generally, the device structures reported here can also be used for other types of optoelectronic devices, such as light emitting diodes and photodetectors. Full article
(This article belongs to the Special Issue Advanced Metal Oxide Films: Materials and Applications)
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6 pages, 998 KiB  
Communication
Protection of Cu from Oxidation by Ta Capping Layer
by Ivan S. Zhidkov, Andrey I. Kukharenko, Mikhail A. Milyaev, Evgeniy A. Kravtsov, Marina V. Makarova, Vladimir V. Gapontsev, Sergey V. Streltsov, Seif O. Cholakh and Ernst Z. Kurmaev
Coatings 2023, 13(5), 926; https://0-doi-org.brum.beds.ac.uk/10.3390/coatings13050926 - 15 May 2023
Cited by 1 | Viewed by 1021
Abstract
X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) measurements (core levels and valence bands) were made of Cu thin films that were prepared and coated by capping Ta layers with different thicknesses (5, 10, 15, 20, and 30 Å), and are presented. The [...] Read more.
X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) measurements (core levels and valence bands) were made of Cu thin films that were prepared and coated by capping Ta layers with different thicknesses (5, 10, 15, 20, and 30 Å), and are presented. The XRR and XPS Ta 4f-spectra revealed a complete oxidation of the protective layer up to a thickness of 10 Å. From the thickness of the capping layer of 15 Å, a pure Ta-metal line appeared in the XPS Ta 4f-spectrum, the contribution of which increased up to 30 Å. The XPS Cu 2p-spectra of the underlying copper layer revealed the oxidation with the formation of CuO up to a thickness of the Ta-layer of 10 Å. Starting from a thickness of 15 Å, the complete protection of the Cu layer against oxidation was ensured during exposure to the ambient atmosphere. Full article
(This article belongs to the Special Issue Advanced Metal Oxide Films: Materials and Applications)
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