Selected Papers From the 25th Annual Conference and 14th International Conference of Chinese Society of Micro-Nano Technology (CSMNT 2023)

A special issue of Micromachines (ISSN 2072-666X).

Deadline for manuscript submissions: 30 June 2024 | Viewed by 4075

Special Issue Editors


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Guest Editor
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
Interests: scanning probe microscope; high magnetic field; cryogenic technology; piezo motor; terahertz technology and science
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Guest Editor
High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
Interests: scanning probe microscope; high magnetic field; cryogenic technology; magnetic materials; magnetic structures

Special Issue Information

Dear Colleagues,

The 25th Annual Conference of the Chinese Society of Micro-Nano Technology & 14th International Conference of the Chinese Society of Micro-Nano Technology (CSMNT2023) will be held from 20 to 23 October 2023, in Shenzhen, China. The conference is hosted by the Chinese Society of Micro-Nano Technology, and organized by the Tsinghua Shenzhen International Graduate School, Peking University Shenzhen Graduate School, Harbin Institute of Technology and Shenzhen Society of Micro-Nano Technology. The theme of this conference is "Magical Micro-Nano • Wonderful World", and 10–12 leading experts will be invited to deliver plenary speeches. CSMNT2023 will focus on new technologies, achievements, breakthroughs and trends in the micro/nano fields and other related frontiers. This Special Issue will publish selected papers from the 25th Annual Conference of the Chinese Society of Micro-Nano Technology & 14th International Conference of the Chinese Society of Micro-Nano Technology (CSMNT2023).

We aim to collect high-quality research papers, short communications, and review articles from CSMNT2022 that focus on micro-nanoenergy and MEMS, nanosystems and nanomaterials, and related emerging multidisciplinary fields. The conference will cover the following main topics:

Topic 1: Micro-/Nanosensors and Actuators;

Topic 2: Nano Precision Manufacturing Technology;

Topic 3: Micro/Nanoelectromechanical System;

Topic 4: Micro/Nanobiomedicine;

Topic 5: Design and Manufacturing Technology of Micro-/Nanodevices;

Topic 6: Engineering Manufacturing and Characterization of Micro-/Nanostructures;

Topic 7: Micro-/Nanoenergy Technology;

Topic 8: Micro-/Nanomotor and Intelligent Robot;

Topic 9: Micro-/Nanorobot Technology and Application;

Topic 10: Micro-/Nanomeasurement and Instrument Technology;

Topic 11: Micro-/Nanomaterials and Devices;

Topic 12: Micro-/Nanostructures and Devices of Photoelectric Conversion Materials;

Topic 13: Micro-/Nanostructured Films and Coatings and Their Applications;

Topic 14: Micro-/Nanostructure and Signal;

Topic 15: Micro-/Nanobionic Manufacturing;

Topic 16: Micro-/Nanofluidic Technology and Its Application;

Topic 17: Micro/Nano Cell Biochip;

Topic 18: Application of Micro-/Nanotechnology;

Topic 19: Flexible Micro-/Nanomaterials and Devices;

Topic 20: Micro-/Nanomanipulation, Detection and Characterization Technologies for Cells.

The papers that attract the most interest in the conference or that provide novel contributions will be selected for publication in Micromachines. These papers will be peer-reviewed for the validation of research results, developments, and applications. In addition, submissions from others that are not associated with this conference but with themes focusing on related topics from members of the Chinese Society of Micro-Nano Technology are also welcome.

Prof. Dr. Qingyou Lu
Dr. Qiyuan Feng
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (5 papers)

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Research

16 pages, 11605 KiB  
Article
Characterization of Sand and Dust Pollution Degradation Based on Sensitive Structure of Microelectromechanical System Flow Sensor
by Jinchuan Chen, Xiao Wen, Qinwen Huang, Wanchun Ren, Ruiwen Liu and Chunhua He
Micromachines 2024, 15(5), 574; https://0-doi-org.brum.beds.ac.uk/10.3390/mi15050574 - 26 Apr 2024
Viewed by 311
Abstract
The effect of sand and dust pollution on the sensitive structures of flow sensors in microelectromechanical systems (MEMS) is a hot issue in current MEMS reliability research. However, previous studies on sand and dust contamination have only searched for sensor accuracy degradation due [...] Read more.
The effect of sand and dust pollution on the sensitive structures of flow sensors in microelectromechanical systems (MEMS) is a hot issue in current MEMS reliability research. However, previous studies on sand and dust contamination have only searched for sensor accuracy degradation due to heat conduction in sand and dust cover and have yet to search for other failure-inducing factors. This paper aims to discover the other inducing factors for the accuracy failure of MEMS flow sensors under sand and dust pollution by using a combined model simulation and sample test method. The accuracy of a flow sensor is mainly reflected by the size of its thermistor, so in this study, the output value of the thermistor value was chosen as an electrical characterization parameter to verify the change in the sensor’s accuracy side by side. The results show that after excluding the influence of heat conduction, when sand particles fall on the device, the mutual friction between the sand particles will produce an electrostatic current; through the principle of electrostatic dissipation into the thermistor, the principle of measurement leads to the resistance value becoming smaller, and when the sand dust is stationary for some time, the resistance value returns to the expected level. This finding provides theoretical guidance for finding failure-inducing factors in MEMS failure modes. Full article
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13 pages, 5328 KiB  
Communication
Design and Simulation of a System-in-Package Chip for Combined Navigation
by Yang Yang, Guangyi Shi and Yufeng Jin
Micromachines 2024, 15(2), 167; https://0-doi-org.brum.beds.ac.uk/10.3390/mi15020167 - 23 Jan 2024
Viewed by 850
Abstract
This paper proposes a system-in-package combination navigation chip. We used wire bonding, chip stacking, surface mount, and other processes to integrate satellite navigation chips, inertial navigation chips, microprocessor chips, and separation devices. Finally, we realized the hardware requirements for combined navigation in a [...] Read more.
This paper proposes a system-in-package combination navigation chip. We used wire bonding, chip stacking, surface mount, and other processes to integrate satellite navigation chips, inertial navigation chips, microprocessor chips, and separation devices. Finally, we realized the hardware requirements for combined navigation in a 20 mm × 20 mm chip. Further, we performed a multi-physics simulation analysis of the package design. For antenna signals, the insertion loss was greater than −1 dB@1 GHz and the return loss was less than −10 dB@1 GHz. The amplitude of these noises of the signal between the MCU and the IMU was approximately 20%, and the maximum value of the coupling coefficient between signal lines on the top surface was 13.4174%. The ninth mode of the power plane yielded a maximum voltage of 55 mV, and all power delivery networks had a DC voltage drop of less than 2%. The highest temperature in the microsystem was approximately 42 °C. These results show that our design performed well in terms of signal, power, and thermal performance. Full article
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13 pages, 2581 KiB  
Article
Integrated Microfluidic Chip Technology for Copper Ion Detection Using an All-Solid-State Ion-Selective Electrode
by Wenpin Zhang, Shuangquan Wang, Dugang Kang, Zhi Xiong, Yong Huang, Lin Ma, Yun Liu, Wei Zhao, Shouliang Chen and Yi Xu
Micromachines 2024, 15(1), 160; https://0-doi-org.brum.beds.ac.uk/10.3390/mi15010160 - 21 Jan 2024
Viewed by 828
Abstract
This study involved the preparation of an all-solid-state ion-selective electrode (ASS-ISE) with copper and a poly(3,4-ethylenedioxythiophene) and polystyrene sulfonate (PEDOT/PSS) conversion layer through electrode deposition. The morphology of the PEDOT/PSS film was characterized, and the performance of the copper ion-selective film was optimized. [...] Read more.
This study involved the preparation of an all-solid-state ion-selective electrode (ASS-ISE) with copper and a poly(3,4-ethylenedioxythiophene) and polystyrene sulfonate (PEDOT/PSS) conversion layer through electrode deposition. The morphology of the PEDOT/PSS film was characterized, and the performance of the copper ion-selective film was optimized. Additionally, a microfluidic chip for the ASS-ISE with copper was designed and prepared. An integrated microfluidic chip test system with an ASS-ISE was developed using a self-constructed potential detection device. The accuracy of the system was validated through comparison testing with atomic absorption spectrophotometry (AAS). The experimental findings indicate that the relative standard deviation (RSD) of the integrated ASS-ISE with the copper microfluidic chip test system is 4.54%, as compared to the industry standard method. This value complies with the stipulated requirement of an RSD ≤ 5% in DL/T 955-2016. Full article
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10 pages, 3800 KiB  
Article
Implementation of Highly Reliable Contacts for RF MEMS Switches
by Lili Jiang, Lifeng Wang, Xiaodong Huang, Zhen Huang and Min Huang
Micromachines 2024, 15(1), 155; https://0-doi-org.brum.beds.ac.uk/10.3390/mi15010155 - 20 Jan 2024
Viewed by 926
Abstract
A contact is the key structure of RF MEMS (Radio Frequency Microelectromechanical System) switches, which has a direct impact on the switch’s electrical and mechanical properties. In this paper, the implementation of highly reliable contacts for direct-contact RF MEMS switches is provided. As [...] Read more.
A contact is the key structure of RF MEMS (Radio Frequency Microelectromechanical System) switches, which has a direct impact on the switch’s electrical and mechanical properties. In this paper, the implementation of highly reliable contacts for direct-contact RF MEMS switches is provided. As a soft metal material, gold has the advantages of low contact resistance, high chemical stability, and mature process preparation, so it is chosen as the metal material for the beam structure as well as the contacts of the switch. However, a Pt film is used in the bottom contact area to enhance the reliability of the contact. Three kinds of contacts with various shapes are fabricated using different processes. Particularly, a circular-shaped contact is obtained by dry/wet combined processes. The detailed fabrication process of the contacts as well as the Pt film on the bottom contact area are given. The experimental test shows that the contact shape has little effect on the RF performance of the switches. However, the circular contact shows better reliability than other contacts and can work well even after 1.2 × 109 cycles. Full article
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13 pages, 4117 KiB  
Article
A High-Precision Bandgap Reference with Chopper Stabilization and V-Curve Compensation Technique
by Enming Chen, Thomas Wu, Jianhai Yu and Liang Yin
Micromachines 2024, 15(1), 74; https://0-doi-org.brum.beds.ac.uk/10.3390/mi15010074 - 29 Dec 2023
Viewed by 868
Abstract
The MEMS sensor converts the physical signal of nature into an electrical signal. The output signal of the MEMS sensor is so weak and basically in the low-frequency band that the MEMS sensor interface circuit has a rigorous requirement for the noise/offset and [...] Read more.
The MEMS sensor converts the physical signal of nature into an electrical signal. The output signal of the MEMS sensor is so weak and basically in the low-frequency band that the MEMS sensor interface circuit has a rigorous requirement for the noise/offset and temperature coefficient, especially in the bandgap reference block. However, the traditional amplifier has low-frequency noise and offset voltage, which will decrease the precision of the bandgap reference. In order to satisfy the need of the MEMS sensor interface circuit, a high-precision and low-noise bandgap reference is proposed in this paper. A novel operational amplifier with a chopper-stabilization technique is adopted to reduce offset and low-frequency noise. At the same time, the V-curve compensation circuit is used to realize the second-order curvature compensation. The circuit is implemented under the 0.18 μm standard of the CMOS process. The test result shows that the temperature coefficient of the bandgap is 2.31 ppm/°C in the range of −40–140 °C, while the output voltage noise is only 616 nV/sqrt(Hz)@1 Hz and the power-supply rejection ratio is 73 dB@10 kHz. The linear adjustment rate is 0.33 mV/V for supply voltages of 1.2–1.8 V at room temperature, the power consumption is only 107 μW at 1.8 V power supply voltage, and the chip active area is 0.21 × 0.28 mm2. Full article
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