Mechanical Behavior of Interconnection Materials in Power Device Packaging under Harsh Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Manufacturing Processes and Systems".
Deadline for manuscript submissions: 20 December 2024 | Viewed by 38
Special Issue Editors
Interests: reliability of power semiconductor device; thermomechanical modeling; failure mechanism of electronic packaging; micro- and macro-mechanical behaviors of packaging materials
Interests: reliability and interfacial reactions of lead-free solder joints in electronic packaging; reliability design and analysis of electronic devices and products; advanced electronic packaging materials and technologies
Interests: multiscale mechanical behavior of packaging materials; fracture and failure mechanism of brittle materials; Impact dynamics
Special Issue Information
Dear Colleagues,
Power devices have complex service environments and high reliability requirements. For instance, the service environment of automotive-grade power devices is very harsh, often requiring them to withstand severe temperatures (−40~150 ℃) and mechanical loads (vibration or shock) at the same time and still be able to operate normally; additionally, power devices applied to power systems often work in extreme weather conditions. In practical applications, interconnection materials in power devices also tend to experience harsh loading conditions. The degradation of the mechanical properties of the interconnection materials seriously affects the conductive and heat transfer characteristics of power devices and ultimately leads to them failing; therefore, the methods, testing, and evaluation of the mechanical behavior of interconnection materials in power device packaging under harsh applications are important issues.
Dr. Tong An
Dr. Jing Han
Dr. Zhen Wang
Guest Editors
Manuscript Submission Information
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Keywords
- mechanical behavior
- characterization
- interconnection materials
- harsh service environments
- power device packaging
