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Electronics
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Advances in Thin-Film Systems
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Advances in Thin-Film Systems

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 13250

Special Issue Editors

Dr. Baiquan Liu

E-Mail Website
Guest Editor
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Interests: organic light-emitting diodes; polymer light-emitting diodes; solar cells; thin film transistors; perovskite; quantum dot; quantum well; nanoplatelet; optoelectronics; flexible devices
Dr. Guichuan Xing

E-Mail Website
Co-Guest Editor
Institute of Applied Physics and Materials Engineering, University of Macau, Taipa 999078, Macau
Interests: ultrafast laser spectroscopy; nano optoelectronics; spintronics; perovskite for light harvesting and light emission; Nonlinear optical properties and ultrafast carrier dynamics in novel optoelectronic materials and devices
Dr. Peng Xiao

E-Mail Website
Co-Guest Editor
Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China
Interests: thin-film transistors; organic light-emitting diodes; flexible devices; printing electronics; supercapacitors; metal-oxide thin film
Prof. Dr. Dewei Zhao

grade E-Mail Website
Co-Guest Editor
College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
Interests: perovskite solar cells/perovskite LEDs/photodetectors; quantum-dots LEDs; organic solar cells; OLEDs; flexible electronics; thin-film solar cells

Special Issue Information

Dear Colleagues,

Advanced thin-film systems have great applications in microelectronic and optoelectronic fields including thin-film transistors, solar cells, light-emitting diodes, lasers, detectors, and sensors. Emerging concepts, strategies, and techniques can be beneficial for thin-film systems, the understanding of thin-film science, the optimization of film morphologies, the exploration of film interfaces, innovation in device architectures, and the investigation of working mechanisms. On the other hand, the use of theoretical simulations for advanced thin-film systems provides new insights into the intrinsic properties of thin-film systems, which may introduce the potential for further unexplored applications. Therefore, the development of advanced thin-film systems is of significance, particularly for thin-film-based devices.

The goal of this Special Issue is to cover the recent developments in the field of advanced thin-film systems, including novel concepts, fundamental research, and theoretical results. The scope of this Special Issue also includes the preparation, characterization, and application of various thin films. We welcome Original Research and Review articles on themes including, but not limited to:

  • New preparation methods for thin-film technology, such as inkjet printing;
  • The optical and electrical characteristics of thin-film devices;
  • Film morphology;
  • Interfacial and surface physics;
  • Applications of thin films in various microelectronic and optoelectronic fields;
  • The working mechanisms of optoelectronic devices;
  • Theoretical modeling;
  • Challenges in the development of thin-film systems.

Dr. Baiquan Liu
Dr. Guichuan Xing
Dr. Peng Xiao
Prof. Dr. Dewei Zhao
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin film
  • interface
  • morphology
  • device
  • working mechanism

Published Papers (3 papers)

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Research

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10 pages, 2313 KiB  
Article
Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD
by Silvestre Salas-Rodríguez, Joel Molina-Reyes, Jaime Martínez-Castillo, Rosa M. Woo-Garcia, Agustín L. Herrera-May and Francisco López-Huerta
Electronics 2023, 12(4), 903; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics12040903 - 10 Feb 2023
Cited by 4 | Viewed by 1691
Abstract
We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al2O3) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insulator-semiconductor (MIS) capacitors with gate [...] Read more.
We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al2O3) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insulator-semiconductor (MIS) capacitors with gate electrode areas of 3.6 × 10−5 cm2 and 6.4 × 10−5 cm2 at room temperature. The modeling results showed the presence of ohmic conduction, Poole Frenkel emission, Schottky emission, and trap-assisted tunneling mechanisms through the Al2O3 layer. Based on extracted results, we measured a dielectric conductivity of 5 × 10−15 S/cm at low electric fields, a barrier height at oxide/semiconductor interface of 2 eV, and an energy trap level into bandgap with respect to the conduction band of 3.11 eV. These results could be affected by defect density related to oxygen vacancies, dangling bonds, fixed charges, or interface traps, which generate conduction mechanisms through and over the dielectric energy barrier. In addition, a current density model is developed by considering the sum of dominant conduction mechanisms and results based on the finite element method for electronic devices, achieving a good match with experimental data. Full article
(This article belongs to the Special Issue Advances in Thin-Film Systems)
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9 pages, 2905 KiB  
Article
Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
by Jong-Woo Kim, Seong-Geon Park, Min Kyu Yang and Byeong-Kwon Ju
Electronics 2022, 11(19), 3094; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics11193094 - 28 Sep 2022
Cited by 5 | Viewed by 2227
Abstract
Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notably, the application of oxide semiconductors to flexible electronic devices requires a low-temperature fabrication process. However, for the [...] Read more.
Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notably, the application of oxide semiconductors to flexible electronic devices requires a low-temperature fabrication process. However, for the realization of semiconductor characteristics and stable products, the fabrication process requires annealing at temperatures of 300 °C or higher. To address this, a low-temperature microwave annealing method, which improves the electrical characteristics of a transistor and reduces the production time compared with the conventional annealing method, is presented herein. Microwave annealing is a well-known method of annealing that minimizes the heat energy transferred to a substrate via instantaneous heat transfer through the vibrations of the lattice in the material during microwave irradiation and is suitable as a low-temperature annealing method. In this study, we evaluate the electrical characteristics of devices subjected to conventional annealing at 200 °C and 300 °C for 1 h and microwave annealing at 200 °C for 10 min. For the device subjected to microwave annealing at 200 °C for 10 min, the threshold voltage, current on/off ratio, subthreshold swing, and saturation mobility are 13.9 V, 1.14 × 105, 3.05 V/dec, and 4.23 cm2/V·s, respectively. These characteristic results are far superior to the characteristic results of the device subjected to conventional annealing at 200 °C for 1 h and are equivalent to those of the device treated at 300 °C for 1 h. Thus, this study develops a more effective annealing method, which facilitates low-temperature fabrication in a reduced period. Full article
(This article belongs to the Special Issue Advances in Thin-Film Systems)
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Review

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31 pages, 5907 KiB  
Review
Strategies for Applications of Oxide-Based Thin Film Transistors
by Lirong Zhang, Huaming Yu, Wenping Xiao, Chun Liu, Junrong Chen, Manlan Guo, Huayu Gao, Baiquan Liu and Weijing Wu
Electronics 2022, 11(6), 960; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics11060960 - 20 Mar 2022
Cited by 15 | Viewed by 8567
Abstract
Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, [...] Read more.
Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, good process compatibility, optical transparency, low cost, and especially flexibility, oxide-based TFTs have already been adapted for not only displays (e.g., liquid crystal display (LCD), organic light emitting diode (OLED), micro-light-emitting diode (Micro-LED), virtual reality/augmented reality (VR/AR) and electronic paper displays (EPD)) but also large-area electronics, analog circuits, and digital circuits. Furthermore, as the requirement of TFT technology increases, low temperature poly-silicon and oxide (LTPO) TFTs, which combine p-type LTPS and n-type oxide TFT on the same substrate, have drawn further interest for realizing the hybrid complementary metal oxide semiconductor (CMOS) circuit. This invited review provides the current progress on applications of oxide-based TFTs. Typical device configurations of TFTs are first described. Then, the strategies to apply oxide-based TFTs for improving the display quality with different compensation technologies and obtaining higher performance integrated circuits are highlighted. Finally, an outlook for the future development of oxide-based TFTs is given. Full article
(This article belongs to the Special Issue Advances in Thin-Film Systems)
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