Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussions
3.1. Optimization of the Doping Concentration in the n- and p-Regions
3.2. Optimization of the Thickness of the n- and p-Regions
3.3. Photogeneration and Recombination Rate in InGaN Solar Cell
3.4. Photovoltaic Properties of the InGaN Solar Cell
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Parameters | n-InGaN | p-InGaN |
---|---|---|
Thickness (μm) | 0.3 | 0.3 |
Relative permittivity (εr) | 13.1 | 13.1 |
Bandgap Eg (eV) | 1.39 | 1.39 |
Electron affinity χ (eV) | 5.4 | 5.4 |
Effective conduction band density Nc (cm−3) | 1 × 1018 | 1 × 1018 |
Effective valence band density Nv (cm−3) | 4 × 1019 | 4 × 1019 |
Electron mobility μn (cm2. V−1. S−1) | 800 | 800 |
Hole mobility μp (cm2. V−1. S−1) | 450 | 450 |
Donor concentration Nd (cm−3) | 5 × 1019 | - |
Acceptor concentration Na (cm−3) | - | 1 × 1015 |
Cell Parameters | Optimized Values | |
---|---|---|
n-InGaN | p-InGaN | |
Doping concentration | 5 × 1019 cm−3 | 1 × 1015 cm−3 |
Thickness of region | 300 nm | 300 nm |
PV properties | Jsc = 37.68 mA/cm2, Voc = 0.729 V, FF = 80.61%, η = 22.17% |
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Parajuli, D.; Shah, D.K.; KC, D.; Kumar, S.; Park, M.; Pant, B. Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach. Electrochem 2022, 3, 407-415. https://0-doi-org.brum.beds.ac.uk/10.3390/electrochem3030028
Parajuli D, Shah DK, KC D, Kumar S, Park M, Pant B. Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach. Electrochem. 2022; 3(3):407-415. https://0-doi-org.brum.beds.ac.uk/10.3390/electrochem3030028
Chicago/Turabian StyleParajuli, D., Deb Kumar Shah, Devendra KC, Subhash Kumar, Mira Park, and Bishweshwar Pant. 2022. "Influence of Doping Concentration and Thickness of Regions on the Performance of InGaN Single Junction-Based Solar Cells: A Simulation Approach" Electrochem 3, no. 3: 407-415. https://0-doi-org.brum.beds.ac.uk/10.3390/electrochem3030028